| PART |
Description |
Maker |
| BF1109 BF1109R BF1109WR |
N-channel dual-gate MOS-FETs
|
Philips Semiconductors
|
| BF1105WR BF1105 BF1105R |
CONNECTOR
N-channel dual-gate MOS-FETs
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| BF1202WR BF1202R BF1202 |
N-channel dual-gate PoLo MOS-FETs
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BF909 BF909R |
N-channel dual gate MOS-FETs
CANMS3124E16-26PF0
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BF1100R BF1100 |
Dual-gate MOS-FETs
|
NXP Semiconductors
|
| 3SK274 |
RF Dual Gate FETs
|
TOSHIBA
|
| BF964 BF964S |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管，耗尽
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Telefunken
Vishay Siliconix
|
| BF1205C |
Dual N-channel dual gate MOS-FET
|
NXP Semiconductors
|
| BF1206 |
Dual N-channel dual-gate MOS-FET
|
NXP Semiconductors
|
| BF1205C |
Dual N-channel dual gate MOS-FET
|
PHILIPS[Philips Semiconductors]
|
